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Si5402DC
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.035 at V GS = 10 V
0.055 at V GS = 4.5 V
I D (A)
± 6.7
± 5.3
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ?
D
1
D
D
D
D
D
Markin g Code
D
G
AA XX
Lot Tracea b ility
G
S
Bottom V ie w
and Date Code
Part # Code
S
Orderin g Information: Si5402DC-T1-E3 (Lead (P b )-free)
Si5402DC-T1-GE3 (Lead (P b )-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
± 6.7
± 4.8
± 20
± 4.9
± 3.5
A
Continuous Source Current (Diode Conduction) a
I S
2.1
1.1
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.5
1.3
- 55 to 150
260
1.3
0.7
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t ≤ 5s
Steady State
R thJA
40
80
50
95
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R thJF
15 20
Notes:
a. Surface mounted on 1" x 1" FR4 board..
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
www.vishay.com
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